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Synthesis of ZSM-58 crystals with improved diffusivity in gas separation applications

机译:在气体分离应用中具有改善扩散率的ZSM-58晶体的合成

摘要

Methods are provided for synthesizing ZSM-58 crystals with an improved morphology and/or an improved size distribution. By controlling the conditions during synthesis of the ZSM-58 crystals, crystals of a useful size with a narrow size distribution can be generated. Steaming the H-form DDR framework type crystals at a temperature from 426±° C. to 1100±° C. for a time period from about 30 minutes to about 48 hours can attain one or more of the following properties: a CH4 diffusivity of no more than 95% of the CH4 diffusivity of the unsteamed H-form DDR framework type crystals; an N2 BET surface area from 85% to 110% of the surface area of unsteamed H-form DDR framework type crystals; and an equilibrium CO2 sorption capacity from 80% to 105% of the equilibrium CO2 sorption capacity of unsteamed H-form DDR framework type crystals.
机译:提供了用于合成具有改善的形态和/或改善的尺寸分布的ZSM-58晶体的方法。通过控制ZSM-58晶体的合成过程中的条件,可以产生有用尺寸的,具有窄尺寸分布的晶体。在426±°C至1100±°C的温度下汽蒸H型DDR骨架型晶体约30分钟至约48小时的时间可获得以下一种或多种性质:CH4扩散系数为未蒸煮的H型DDR骨架型晶体的CH4扩散率不超过95%; N2 BET表面积为未蒸煮的H型DDR骨架型晶体表面积的85%至110%;平衡CO2吸附量为未蒸煮的H型DDR骨架型晶体的平衡CO2吸附量的80%至105%。

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