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Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice
Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice
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机译:具有通过对超晶格进行退火而形成的具有掩埋绝缘层的半导体器件的制造方法
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摘要
A method for making a semiconductor device may include forming a superlattice on a semiconductor substrate including a respective plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Further, at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween. The method may further include epitaxially forming a semiconductor layer on the superlattice, and annealing the superlattice to form a buried insulating layer in which the at least some semiconductor atoms are no longer chemically bound together through the at least one non-semiconductor monolayer therebetween.
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