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METHOD OF MAKING A SEMICONDUCTOR DEVICE WITH A BURIED INSULATING LAYER FORMED BY ANNEALING A SUPERLATTICE
METHOD OF MAKING A SEMICONDUCTOR DEVICE WITH A BURIED INSULATING LAYER FORMED BY ANNEALING A SUPERLATTICE
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机译:用半绝缘层退火制成的绝缘层制造半导体器件的方法
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摘要
A method for making a semiconductor device may include forming a superlattice on a semiconductor substrate including a respective plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Further, at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween. The method may further include epitaxially forming a semiconductor layer on the superlattice, and annealing the superlattice to form a buried insulating layer in which the at least some semiconductor atoms are no longer chemically bound together through the at least one non-semiconductor monolayer therebetween.
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