Resistive memory element employing electron density modulation and structural relaxation

摘要

A memory device includes at least one memory cell which contains a resistive memory element having a conductive metal oxide located between a first electrode and a second electrode. The conductive metal oxide has a concentration of free electrons in thermodynamic equilibrium in a range from 1.0×10²⁰/cm³ to 1.0×10²¹/cm³. A method of operating the memory device includes redistributing electron density to set and reset the device. An oxide barrier layer may be located between the conductive metal oxide and the second electrode.