首页> 外国专利> WAFER HAVING STEP AND METHOD FOR MANUFACTURING WAFER HAVING STEP

WAFER HAVING STEP AND METHOD FOR MANUFACTURING WAFER HAVING STEP

机译:晶片具有步骤和制造晶片具有步骤的方法

摘要

The present invention has an object of providing a stepped wafer that can prevent a resist from remaining after development, and a method for manufacturing the stepped wafer. The stepped wafer according to the present invention is a stepped wafer having a step and whose main surface is thinner in a center portion and is thicker in an outer periphery. The step includes a curved surface with a radius of curvature ranging from 300 μm to 1800 μm.
机译:本发明的目的在于提供一种可以防止显影后残留抗蚀剂的阶梯状晶片及其制造方法。根据本发明的阶梯式晶片是具有阶梯的阶梯式晶片,其主表面在中心部分较薄而在外周较厚。该台阶包括曲率半径为300μm至1800μm的弯曲表面。

著录项

  • 公开/公告号US2018136560A1

    专利类型

  • 公开/公告日2018-05-17

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORPORATION;

    申请/专利号US201515571904

  • 发明设计人 NAOYUKI TAKEDA;

    申请日2015-07-08

  • 分类号G03F7/30;B24B7/22;B24B9/06;H01L29/32;H01L21/02;G03F7/16;G03F7/039;G03F7/20;

  • 国家 US

  • 入库时间 2022-08-21 13:05:10

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