首页> 外国专利> METHOD FOR EVALUATING SURFACE STATE OF WAFER, METHOD FOR MANAGING WAFER MANUFACTURING STEPS, AND METHOD FOR MANUFACTURING WAFER

METHOD FOR EVALUATING SURFACE STATE OF WAFER, METHOD FOR MANAGING WAFER MANUFACTURING STEPS, AND METHOD FOR MANUFACTURING WAFER

机译:晶圆表面状态的评估方法,晶圆制造步骤的管理方法以及晶圆的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a method for enabling suitable evaluation of the state of the back surface of a wafer to provide an excellent mounting/dismounting characteristic to/from an electrostatic chuck and to supply the wafer allowing suppression of variations in dry etching quality, to provide a method for managing wafer manufacturing steps based on the evaluating method, and to provide a method for manufacturing the wafer having the predetermined state of a back surface of the wafer.;SOLUTION: A film for etching rate evaluation is formed on one main surface of a wafer, the film for etching grate evaluation is dry etched, the other main surface of the wafer is evaluated according to the etching rate of the etching rate evaluating film.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供一种方法,该方法使得能够适当地评估晶片背面的状态,以提供优异的向/从静电卡盘的安装/拆卸特性,并提供可抑制干法蚀刻质量变化的晶片,以提供一种基于评估方法来管理晶片制造步骤的方法,并提供一种用于制造具有晶片后表面预定状态的晶片的方法。晶片的主表面,干法蚀刻炉排评估膜,然后根据蚀刻率评估膜的蚀刻率评估晶片的另一个主表面。;版权:(C)2005,JPO&NCIPI

著录项

  • 公开/公告号JP2005045106A

    专利类型

  • 公开/公告日2005-02-17

    原文格式PDF

  • 申请/专利权人 SHIN ETSU HANDOTAI CO LTD;

    申请/专利号JP20030278994

  • 发明设计人 ABE TATSUO;

    申请日2003-07-24

  • 分类号H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-21 22:32:30

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