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INFRARED DETECTOR, INFRARED DETECTION SENSOR HAVING AN INFRARED DETECTOR AND METHOD OF MANUFACTURING THE SAME
INFRARED DETECTOR, INFRARED DETECTION SENSOR HAVING AN INFRARED DETECTOR AND METHOD OF MANUFACTURING THE SAME
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机译:红外探测器,具有红外探测器的红外检测传感器及其制造方法
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摘要
An infrared detector includes a substrate, a light blocking layer on the substrate, a lower electrode on the light blocking layer, the lower electrode electrically connected to the light blocking layer, a lower insulating layer on the light blocking layer, a first semiconductor layer on the lower insulating layer, a first source electrode and a first drain electrode on the first semiconductor layer, an upper insulating layer on the first semiconductor layer, and a first gate electrode on the upper insulating layer, the first gate electrode electrically connected to the lower electrode, where the first semiconductor layer includes a zinc and a nitrogen, and the first semiconductor layer is configured to generate electric charges by reacting with an infrared ray.
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