NOTCHED FIN STRUCTURES AND METHODS OF MANUFACTURE

摘要

The present disclosure relates to semiconductor structures and, more particularly, to notched fin structures and methods of manufacture. The structure includes: a fin structure composed of a substrate material and a stack of multiple epitaxially grown materials on the substrate material; a notch formed in a first epitaxially grown material of the stack of multiple epitaxially grown materials of the fin structure; an insulator material within the notch of the fin structure; and an insulator layer surrounding the fin structure and above a surface of the notch.