THICKNESS UNIFORMITY CONTROL FOR EPITAXIALLY-GROWN STRUCTURES IN A CHEMICAL VAPOR DEPOSITION SYSTEM

摘要

Systems and methods are described herein for improving the overall thickness control and the radial thickness profile of epitaxially-grown films or layers on wafers. Continuous, in situ measurement of thickness at a radially inner region and a radially outer region are used in embodiments to control corresponding precursor and/or dilution gas flow rates. Such measurements can be made using white light reflectometry through a viewport in the reactor housing.