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SYSTEMS AND METHODS FOR FORMING LOW RESISTIVITY METAL CONTACTS AND INTERCONNECTS BY REDUCING AND REMOVING METALLIC OXIDE
SYSTEMS AND METHODS FOR FORMING LOW RESISTIVITY METAL CONTACTS AND INTERCONNECTS BY REDUCING AND REMOVING METALLIC OXIDE
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机译:通过还原和去除金属氧化物形成低电阻率金属接触和互连的系统和方法
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摘要
A method for depositing a metal layer on a barrier layer includes a) arranging a substrate in a processing chamber. The substrate has been exposed to at least one of air and/or oxidizing chemistry and includes a barrier layer and one or more underlying layers, wherein the barrier layer includes a material selected from a group consisting of tantalum nitride, titanium nitride, tantalum and titanium. The method includes b) supplying a gas selected from a group consisting of hydrazine, a gas including fluorine species, a gas including chlorine species, derivatives of hydrazine, ammonia, carbon monoxide, a gas including amidinates, and/or a gas including metal organic ligands to the processing chamber for a predetermined period to remove oxidation from the barrier layer. The method includes c) depositing a metal layer on the barrier layer after b). The metal layer includes a metal selected from a group consisting of cobalt, copper, tungsten, ruthenium, rhodium, molybdenum, and nickel.
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