SYSTEMS AND METHODS FOR FORMING LOW RESISTIVITY METAL CONTACTS AND INTERCONNECTS BY REDUCING AND REMOVING METALLIC OXIDE

摘要

A method for depositing a metal layer on a barrier layer includes the step of: a) arranging a substrate in a processing chamber. The substrate is exposed to at least one of air and/or an oxidizing chemical substance, and includes a barrier layer and one or more lower layers, wherein the barrier layer includes a material selected from the group consisting of tantalum nitride, titanium nitride, tantalum, and titanium. The method includes the step of: b) supplying a gas selected from the group consisting of hydrazine, a gas including fluorine species, a gas including chlorine species, derivatives of hydrazine, ammonia, carbon monoxide, a gas including amidinates, and/or a gas including metal organic ligands to the processing chamber for a predetermined period to remove oxidation from the barrier layer. The method includes the step of: c) depositing the metal layer on the barrier layer after the step b). The metal layer includes a metal selected from the group consisting of cobalt, copper, tungsten, ruthenium, rhodium, molybdenum, and nickel.