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Three-dimensional semiconductor device with vertical and horizontal channels in stack structure having electrodes vertically stacked on the substrate
Three-dimensional semiconductor device with vertical and horizontal channels in stack structure having electrodes vertically stacked on the substrate
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机译:具有堆叠结构中的垂直和水平沟道的三维半导体器件,其电极垂直堆叠在基板上
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摘要
A three-dimensional (3D) semiconductor device includes a stack structure including electrodes vertically stacked on a substrate, a channel structure coupled to the electrodes to constitute a plurality of memory cells three-dimensionally arranged on the substrate, the channel structure including first vertical channels and second vertical channels penetrating the stack structure and a first horizontal channel disposed under the stack structure to laterally connect the first vertical channels and the second vertical channels to each other, a second horizontal channel having a first conductivity type and connected to a sidewall of the first horizontal channel of the channel structure, and conductive plugs having a second conductivity type and disposed on top ends of the second vertical channels.
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