TFT DEVICE FOR MEASURING CONTACT RESISTANCE AND MEASUREMENT METHOD FOR CONTACT RESISTANCE

摘要

A TFT device for measuring a contact resistance and a measurement method for a contact resistance are disclosed. The TFT includes an active layer, a gate electrode and a gate insulation layer. The active layer includes a channel and at least three doping regions. Two of the at least three doping regions is connected through a channel. To measure the contact resistance, two of the at least three doping regions are selected and used as testing points for measuring. The gate electrode is disposed to correspond to the channel. The gate insulation layer insulatively isolates the active layer from the gate electrode. Excellent uniformity can be achieved so that manufacturing, film forming quality, and interface property show similarity to the maximum degree. Accordingly, measurement accuracy is increased, and distribution region can be saved to thereby increase utilization of an experimental region.