首页> 外国专利> VOLTAGE REGULATION BASED ON CURRENT SENSING IN MOSFET DRAIN-TO-SOURCE RESISTANCE IN ON-STATE RDS(ON)

VOLTAGE REGULATION BASED ON CURRENT SENSING IN MOSFET DRAIN-TO-SOURCE RESISTANCE IN ON-STATE RDS(ON)

机译:基于电流感应的导通状态RDS(ON)中MOSFET漏源电阻的电压调节

摘要

A direct current (DC) power supply system performs a method of delivering electrical energy by a synchronous buck voltage regulator (VR) coupled to an information handling resource of an information handling system by switching between a high side (HS) control switch and a low side (LS) synchronous switch to regulate a direct current (DC) output voltage (VOUT) generated from an input voltage (VIN). Inductor current (IMON) values of the voltage regulator are measured during LS synchronous switch ON state. IMON values of the voltage regulator are synthesized during HS power switch ON state. A complete inductor current signal is generated that combines the measured and synthesized IMON values.
机译:直流(DC)电源系统通过在高端(HS)控制开关和低端(HS)控制开关之间切换来实现通过与信息处理系统的信息处理资源耦合的同步降压稳压器(VR)输送电能的方法。侧(LS)同步开关调节从输入电压(VIN)产生的直流(DC)输出电压(VOUT)。在LS同步开关接通状态下测量电压调节器的电感电流(IMON)值。在HS电源开关接通状态期间,将合成电压调节器的IMON值。生成完整的电感器电流信号,该信号将测量的和合成的IMON值组合在一起。

著录项

  • 公开/公告号US2018262108A1

    专利类型

  • 公开/公告日2018-09-13

    原文格式PDF

  • 申请/专利权人 DELL PRODUCTS L.P.;

    申请/专利号US201715457906

  • 发明设计人 SHIGUO LUO;KEJIU ZHANG;RALPH H. JOHNSON;

    申请日2017-03-13

  • 分类号H02M3/158;H02M1/088;G06F1/26;

  • 国家 US

  • 入库时间 2022-08-21 13:01:49

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