首页>
外国专利>
B-TRAN Geometry and Structure That Provides Both High Gain and High Current Density
B-TRAN Geometry and Structure That Provides Both High Gain and High Current Density
展开▼
机译:提供高增益和高电流密度的B-TRAN几何结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
Three optimizations are provided for B-TRAN devices which include field plate trenches: 1) the trench dielectric thickness is large enough to withstand the base-to-emitter voltage, but thin enough to provide good electrical coupling between the poly field plate and the adjacent p-type silicon; 2) the base contact width is small enough to provide an acceptably low reverse base contact region pinch-off voltage, but large enough to avoid degradation of both base resistance; and 3) the emitter width is small enough to keep an acceptably high current density at the emitter's center.
展开▼