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ELECTRONIC DEVICE INCLUDING TOPOLOGICAL INSULATOR AND TRANSITION METAL OXIDE
ELECTRONIC DEVICE INCLUDING TOPOLOGICAL INSULATOR AND TRANSITION METAL OXIDE
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机译:包含拓扑绝缘体和过渡金属氧化物的电子设备
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摘要
An electronic device may include a topological insulating layer including first and second surfaces facing each other and a transition metal oxide layer provided on the first surface of the topological insulating layer. The topological insulating layer may have a thickness ranging from 1 nm to 10 nm.
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