Electronic device including topological insulator and transition metal oxide

摘要

According to embodiments of the present invention, an electronic device comprising a topological insulator and transition metal oxide is provided. The electronic device includes a topological insulating layer comprising a first side and a second side facing each other, and a transition metal oxide layer disposed on the first side of the topological insulating layer. The topological insulating layer has a thickness of 1 nm to 10 nm. It is possible to control the resistance state of the surface of the topological insulator.