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SN DOPED ZNS NANOWIRES FOR WHITE LIGHT SOURCE MATERIAL

机译:SN掺杂的ZNS纳米线,用于白色光源材料

摘要

According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.
机译:根据示例性实施例,一种合成用于电致发光白光源的掺杂锡(Sn)的掺杂的硫化锌(ZnS)纳米结构的方法包括通过在基板上真空沉积锡作为催化剂纳米结构,用锡涂覆包括氧化硅层的基板,将涂覆有锡的基板放入炉中,将载气流引入炉中,向炉中添加ZnS功率,生长ZnS纳米结构,并将Sn溶解在生长的ZnS纳米结构中。 S空位在ZnS纳米结构的表面上。 ZnS纳米结构在具有在750℃至850℃范围内的温度的衬底上生长。

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