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METHOD FOR AVOIDING IL REGROWN IN A HKMG PROCESS
METHOD FOR AVOIDING IL REGROWN IN A HKMG PROCESS
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机译:避免HKMG过程中IL重生的方法
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摘要
The present disclosure addresses and solves the current problem of oxygen accumulation in IL after an HKMG stack is formed. A fabrication method is provided for fabricating high-k/metal gate semiconductor device by forming at least one Titanium (Ti) layer between multiple HK layers. A high-k/metal gate semiconductor device including at least one TiO2 layer between multiple HK layers is also provided.
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