首页> 外国专利> Ion injector and lens system for ion beam milling

Ion injector and lens system for ion beam milling

机译:用于离子束铣削的离子注入器和透镜系统

摘要

The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. Apertures may be formed in each electrode after the electrodes are secured together, thereby ensuring that the apertures are well-aligned between neighboring electrodes. In some cases, the electrodes are made from degeneratively doped silicon, and the electrode assembly is secured together through electrostatic bonding. Other electrode materials and methods of securing may also be used. The electrode assembly may include a hollow cathode emitter electrode in some cases, which may have a frustoconical or other non-cylindrical aperture shape. A chamber liner and/or reflector may also be present in some cases.
机译:本文的实施例涉及用于在半导体衬底上执行离子蚀刻的方法和设备,以及用于形成这种设备的方法。在一些实施例中,可以制造电极组件,该电极组件包括具有不同目的的多个电极,并且每个电极以机械稳定的方式固定到下一个。在将电极固定在一起之后,可以在每个电极中形成孔,从而确保孔在相邻电极之间很好地对准。在一些情况下,电极由退化掺杂的硅制成,并且电极组件通过静电结合固定在一起。也可以使用其他电极材料和固定方法。在某些情况下,电极组件可包括中空阴极发射电极,其可具有截头圆锥形或其他非圆柱形的孔形状。在某些情况下,也可能存在腔室衬管和/或反射器。

著录项

  • 公开/公告号US9916993B2

    专利类型

  • 公开/公告日2018-03-13

    原文格式PDF

  • 申请/专利权人 LAM RESEARCH CORPORATION;

    申请/专利号US201615191176

  • 发明设计人 IVAN L. BERRY III;THORSTEN LILL;

    申请日2016-06-23

  • 分类号C03C25/68;H01L21/67;H01L21/3065;H01J37/32;

  • 国家 US

  • 入库时间 2022-08-21 12:58:51

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号