SUBTRACTIVE PATTERNING OF BACK END OF LINE COMPATIBLE MIXED IONIC ELECTRONIC CONDUCTOR MATERIALS

摘要

A method of forming a mixed ionic electron conductor (MIEC)-based memory cell access device using a subtractive etch process is provided. After blanket depositing a MIEC material layer on a bottom electrode and a dielectric layer laterally surrounding the bottom electrode and blanket depositing a metal layer on the MIEC material layer, the metal layer and the MIEC material layer are patterned simultaneously.