PAHSE CHANG MATERIAL FOR PHASE CHANG MEMORY AND PREPARATION METHOD THEREFOR

摘要

A phase change material for a phase change memory and a preparing method thereof. The phase change material for a phase change memory has a chemical formula of Sc_100-x-y-zGe_xSb_yTe_z, wherein 0≤x≤60, 0≤y≤90, 0z≤65, 0100-x-y-z100. The phase change material for a phase change memory according to the present invention is capable of repeatedly changing phases. The Sc_100-x-y-zGe_xSb_yTe_z has two different resistance value states, i.e., a high resistance state and a low resistance state, and a reversible transformation between the high resistance state and the low resistance state can be achieved by being applied a pulse electrical signal thereto, which satisfies basic requirements of a storage material for the phase change memory.