A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS

摘要

The present invention relates to a method of manufacturing semiconductor materials comprising interface layers of group III-V materials in combination with Si substrates. Especially the present invention is related to a method of manufacturing semiconductor materials comprising GaAs in combination with Si(111) substrates, wherein residual strain due to different thermal expansion coefficient of respective materials is counteracted by introducing added layer(s) compensating the residual strain.