Method, apparatus and system for back gate biasing for FD-SOI devices

摘要

At least one method, apparatus and system disclosed involves providing semiconductor device having transistors comprising back gates and front gates. The semiconductor device comprises a signal processing unit for processing an input signal to provide an output signal. The signal processing unit includes a first transistor and a second transistor. The first transistor includes a first back gate electrically coupled to a first front gate. The signal processing unit also includes a second transistor operatively coupled to the first transistor. The second transistor includes a second back gate electrically coupled to a second front gate. The semiconductor device also includes a gain circuit for providing a gain upon the output signal. The semiconductor device also includes a bias circuit to provide a first bias signal to the first back gate and a second bias signal to the second back gate.