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Method of manufacturing transparent conductor, transparent conductor and device for manufacturing the same, and device for manufacturing transparent conductor precursor

机译:透明导体的制造方法,透明导体及其制造装置以及透明导体前体的制造装置

摘要

According to one embodiment, a method of manufacturing a transparent conductor is provided. In the method, a silver nanowire layer including a plurality of silver nanowires and having openings is formed on a graphene film supported by a copper support. Then, a transparent resin layer insoluble in a copper-etching solution is formed on the silver nanowire layer such that the transparent resin layer contacts the graphene film through the openings. The copper support is then brought into contact with the non-acidic copper-etching solution to remove the copper support, thereby exposing the graphene film.
机译:根据一个实施例,提供了一种制造透明导体的方法。在该方法中,在由铜载体支撑的石墨烯膜上形成包括多个银纳米线并且具有开口的银纳米线层。然后,在银纳米线层上形成不溶于铜蚀刻溶液的透明树脂层,使得透明树脂层通过开口接触石墨烯膜。然后使铜载体与非酸性铜蚀刻溶液接触以除去铜载体,从而露出石墨烯膜。

著录项

  • 公开/公告号US9847150B2

    专利类型

  • 公开/公告日2017-12-19

    原文格式PDF

  • 申请/专利权人 KABUSHIKI KAISHA TOSHIBA;

    申请/专利号US201514657571

  • 申请日2015-03-13

  • 分类号H01B1/02;H01B1/24;B82Y30;H01B1/22;H01B1/20;C23F1/18;B82Y10;B82Y40;G06F3/041;H01B1/04;H01L51/44;H01L31/0224;H01L51/52;H01L29/16;H01L29/41;C23F1;C23F1/08;H01L51;H01L31/028;

  • 国家 US

  • 入库时间 2022-08-21 12:57:23

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