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Design-aware pattern density control in directed self-assembly graphoepitaxy process
Design-aware pattern density control in directed self-assembly graphoepitaxy process
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机译:定向自组装石墨外延工艺中的设计感知型密度控制
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摘要
A method for local pattern density control of a device layout used by graphoepitaxy directed self-assembly (DSA) processes includes importing a multi-layer semiconductor device design into an assist feature system and determining overlapping regions between two or more layers in the multi-layer semiconductor device design using at least one Boolean operation. A fill for assist features is generated to provide dimensional consistency of device features by employing the overlapping regions to provide placement of the assist features. An updated device layout is stored in a memory device.
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