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DIODE-TRIGGERED SCHOTTKY SILICON-CONTROLLED RECTIFIER FOR FIN-FET ELECTROSTATIC DISCHARGE CONTROL
DIODE-TRIGGERED SCHOTTKY SILICON-CONTROLLED RECTIFIER FOR FIN-FET ELECTROSTATIC DISCHARGE CONTROL
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机译:用于FIN-FET静电放电控制的二极管触发肖特基硅控整流器
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摘要
Various embodiments include fin-type field effect transistor (FinFET) structures. In some cases, a FinFET structure includes: a p-type substrate; a silicon-controlled rectifier (SCR) over the p-type substrate, the SCR including: a p-well region and an adjacent n-well region over the substrate; and a negatively charged fin over the p-well region; and a Schottky diode electrically coupled with the SCR, the Schottky diode including a gate in the n-well region, the Schottky diode positioned to mitigate electrostatic discharge (ESD) across the negatively charged fin and the n-well region in response to application of a forward voltage across the gate.
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