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Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers
Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers
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机译:基于III族氮化物的LED结构,包括带有势阱单元界面层的多个量子阱
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摘要
Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layers, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.
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