CROSSBAR RESISTIVE MEMORY ARRAY WITH HIGHLY CONDUCTIVE COPPER/COPPER ALLOY ELECTRODES AND SILVER/SILVER ALLOYS ELECTRODES

摘要

Embodiments of the present invention provide systems and methods for the fabrication of a crossbar array fabrication of resistive random access memory (RRAM) cells. The array structure contains large grain copper and its alloy or silver and its alloy. A metal cap and spacer are used to protect copper or silver from chemical modifications during memory cell patterning.