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Crossbar resistive memory array with highly conductive copper/copper alloy electrodes and silver/silver alloys electrodes
Crossbar resistive memory array with highly conductive copper/copper alloy electrodes and silver/silver alloys electrodes
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机译:具有高导电性铜/铜合金电极和银/银合金电极的纵横制电阻式存储器阵列
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摘要
Embodiments of the present invention provide systems and methods for the fabrication of a crossbar array fabrication of resistive random access memory (RRAM) cells. The array structure contains large grain copper and its alloy or silver and its alloy. A metal cap and spacer are used to protect copper or silver from chemical modifications during memory cell patterning.
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