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Silicon photoelectric multiplier with very low optical cross-talk and fast readout
Silicon photoelectric multiplier with very low optical cross-talk and fast readout
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机译:硅光电倍增器,具有极低的光学串扰和快速读出
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摘要
The silicon-based photomultiplier device comprises a substrate (1), a first layer (2) of a first conductivity type, a second layer (3) of a second conductivity type formed on the first layer, wherein the first layer (2) and the second layer (3) form a p-n junction, wherein the first layer (2) and the second layer (3) are disposed on or above the substrate (1). A material layer (15) between the substrate (1) and the first layer (2) fulfills the function of a light absorber, thereby efficiently suppressing crosstalk between adjacent cells of the device. Material layer (15) may further serve as an electrode for readout of electrical signals from the device.
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