Propagation of Ultra-fast Femtosecond Pulses in Silicon-on-insulator Optical Waveguides

摘要

A complete theoretical modeling, avoiding any priori-assumption, is deduced and demonstrated for ultra-fast femtosecond optical pulses in silicon-on-insulator optical waveguides which includes the group velocity dispersion, third-order dispersion, self-phase and cross-phase modulations, self-steepening and shock formation, Raman depletion, propagation loss, two-photon absorption, free-carrier absorption, and free-carrier dispersion. Finally, the temporal and spectral characteristics of 100 fs optical pulses at 1.55 μm are numerically observed in 5-mm-long waveguides while considering different initial chirps and incident peak intensity levels.