Augmented capacitor structure for high quality (Q)-factor radio frequency (RF) applications

摘要

An augmented capacitor structure includes a substrate and a first capacitor plate of a first conductive layer on the substrate. The augmented capacitor structure also includes an insulator layer on a surface of the first capacitor plate facing away from the substrate and a second capacitor plate. The second capacitor plate includes a second conductive layer on the insulator layer, supported by the first capacitor plate as a first capacitor. A second capacitor electrically is coupled in series with the first capacitor. The first capacitor plate is shared by the first capacitor and the second capacitor as a shared first capacitor plate. An extended first capacitor plate includes a first dummy portion of a third conductive layer and a first dummy via bar extending along the surface of the shared first capacitor plate. The first dummy portion extends along and is supported by the first dummy via bar.