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A bulk-driven voltage attenuator

机译:体驱动电压衰减器

摘要

bulk driven napu011bu0165ovu00fd atenuu00e1tor contains two pmos transistors kasku00e1dovu011b involved between supply voltage and ground.the first transistor is connected to the drain electrode, the source electrode of second transistor, power supply voltage is supplied to the electrode source of the first transistor.the first input voltage is reproduced on the electrode that second transistor, the second input voltage is reproduced on the electrode bulk of the first transistor.output voltage is reproduced from the second electrode source transistor. the second transistor gate electrode, gate, and drain is grounded.the first transistor is connected to the drain electrode, the source electrode of second transistor.the first gate gate transistor is reproduced in the control voltage, which ensures that the level of the dc voltage at the output of the atenuu00e1toru is half the supply voltage.this increases the range of input voltage following circuit which is connected to the output atenuu00e1toru, i.e. to clamp the output voltage.
机译:批量驱动的nap u011b u016​​5ov u00fd atenu u00e1tor包含两个pmos晶体管kask u00e1dov u011b,它们介于电源电压和地之间。第一个晶体管连接到漏极,第二个晶体管的源极,提供电源电压到第一晶体管的电极源。在第二晶体管的电极上再现第一输入电压,在第一晶体管的电极主体上再现第二输入电压。从第二电极源晶体管再现输出电压。第二晶体管的栅极,栅极和漏极接地。第一晶体管连接到漏极,第二晶体管的源极。第一栅极以控制电压复制,以确保dc的电平atenu的输出电压是电源电压的一半。这增加了输入电压跟随电路的范围,该电路连接到输出atenu,即钳位输出电压。

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