A bulk-driven voltage attenuator contains two PMOS transistors connected cascadedly between the supply voltage and the ground. The drain electrode of the first transistor is connected to the source electrode of the second transistor, the supply voltage is applied to the source electrode of the first transistor. The first input voltage is led out to the bulk electrode of the second transistor, the second input voltage is lead out to the bulk electrode of the first transistor. The output voltage is led from the source electrode of the second transistor. The gate and the drain electrode of the second transistor are grounded. The drain electrode of the first transistor is connected to the source electrode of the second transistor. The gate of the first transistor is lead out to the control voltage that ensures that the DC voltage level at the attenuator output is at half value of the supply voltage. This increases the input voltage range of the following circuit, which is connected to the attenuator output, i.e. to the output voltage clamp.
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