A NEW CLASS OF NON-CHEMICALLY AMPLIFIED MOLECULAR PHOTORESISTS FOR NEXT GENERATION INTEGRATED CIRCUITS (ICS) TECHNOLOGY

摘要

The present invention describes the design and development of new class molecular n-CAR resists for micro/nano patterning applications. The synthesized n-CAR resists are sensitive to the light and radiations and are able to pattern 10 um-sub 20 nm isolated dense line features under various lithography wavelength tools including EUV (13.5 nm), DUV (254 nm), i-line (365 nm), electron beam (e-beam) and helium ion beam. This invention addresses many of the road blocks in semiconductor Industries for fabricating nano electronic devices with 20 nm nodes and beyond.