Method for chemical extraction of a semiconductor structure and insulation layer from the PLCC, SO, QFP and QFN type electronic components

摘要

method of chemical extraction and isolation layer semiconductor structure with electronic components type plcc, so, qfp and qfn is that separating structure of semiconductor process is performed in two stages.in the first stage of chemically removes metallic substrate component using a mixture of concentrated nitric acid and sulfuric acid in the ratio of 1: 2 with the addition of hydrochloric acid in a quantity of from 1 to 20 ml 1 dm3 mixture for copper and brass or a mixture of stu0119u017co substrates used nitric acid and concentrated hydrochloric acid in a proportion of hcl, hno3 h2o: 1: 1: 1 for aluminium substratesthe time from 15 to 60 seconds, at a temperature from 90u00b0c to 100u00b0c. in the second stage removes layers of component together with its housing using a mixture of sulfuric acid and hydrogen peroxide (30%) in a proportion of from 15: 1 to 10: 1, with the addition of tannins in amounts of 5 mg per 1 dm3 mixtures in time ie from 30 seconds to 1 minute at a temperature of from 90 to 120u00b0c.then the component shall be rinsed in acetone scrubber ultrasonic for 15 seconds, with etching and rinsing operations in the second extraction stage is alternately until the wyekstrahowania silicon semiconductor structure.