PRODUCING OXIDIC COMPOUNDS ON N-GASB SURFACE

摘要

The invention relates to a process of passivation of n-GaSb surface (100) used as a substrate in electronic device manufacturing. According to the invention, the process consists in chemically treating the n-GaSb surface, which was previously cleaned in trichloroethylene solvent, with corrosive HF and HCl solutions, after which the surface free of native oxides is subjected to a chemical treatment by oxidation in water vapour flow, at a temperature of 100°C, for 4 h, on thermostated heating plate, at a temperature of 60°C, for 3 h, resulting in a layer of oxidic complex GaOand SbOof 16.4 ± 0.3 nm and then, under incandescence lamp of 100...150 W, for 400...450 h, to result in an oxidic complex layer of 8.6 ± 0.1 nm, the n-GaSb surface being possibly subjected to anodic oxidation in a solution of citric acid, ethylene glycol and deionized water, at a pH value of 2.35, anodic voltage of 1...30 V, a current 1 mA, for 40 s, wherefrom a preponderant gallium oxide layer is obtained on the n-GaSb surface (100).