APPARATUSES, SYSTEMS, AND METHODS ASSOCIATED WITH A MAGNETOELECTRIC CELL INCLUDING A MAGNETOELECTRIC NANOCOMPOSITE

摘要

Embodiments of the present disclosure describe apparatuses, methods, and systems associated with magnetoelectric cells. A magnetoelectric cell may include a magnetic tunnel junction that includes a fixed magnet layer and a free magnet layer. The magnetoelectric cell may further include a magnetoelectric nanocomposite layer and a metal layer coupled between the magnetoelectric nanocomposite layer. To program the magnetoelectric cell to a parallel state or an anti-parallel state, a voltage may be applied to the magnetoelectric nanocomposite layer and a current may be passed through the metal layer. Embodiments also include magnetic memory cells and memory arrays that include the magnetoelectric cells described herein. Other embodiments may be described and/or claimed.