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GERMANIUM TRANSISTOR STRUCTURE WITH UNDERLAP TIP TO REDUCE GATE INDUCED BARRIER LOWERING/SHORT CHANNEL EFFECT WHILE MINIMIZING IMPACT ON DRIVE CURRENT
GERMANIUM TRANSISTOR STRUCTURE WITH UNDERLAP TIP TO REDUCE GATE INDUCED BARRIER LOWERING/SHORT CHANNEL EFFECT WHILE MINIMIZING IMPACT ON DRIVE CURRENT
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机译:带有欠压尖的锗晶体管结构,可减小对驱动电流的最小影响而产生的栅诱导的栅栏变窄/缩短通道效应
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摘要
An apparatus including a transistor device including a channel disposed on a substrate between a source and a drain, a gate electrode disposed on the channel, wherein the channel includes a length dimension between source and drain that is greater than a length dimension of the gate electrode such that there is a passivated underlap between an edge of the gate electrode and an edge of the channel relative to each of the source and the drain. A method including forming a channel of a transistor device on a substrate; forming first and second passivation layers on a surface of substrate on opposite sides of the channel; forming a gate stack on the channel between first and second passivation layers; and forming a source on the substrate between the channel and the first passivation layer and a drain on the substrate between the channel and the second passivation layer.
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