HIGH POWER CAPACITY THZ-SCALE FREQUENCY DOUBLING UNBALANCED CIRCUIT

摘要

The present invention discloses a high power capacity THz-scale frequency doubling unbalanced circuit related to the technical field of THz-scale circuits. The circuit comprises a radio frequency input waveguide, a quartz substrate, and a radio frequency output waveguide. One end of the quartz substrate is located in a waveguide groove of the radio frequency input waveguide. The other end of the quartz substrate is located in a waveguide groove of the radio frequency output waveguide. An input microstrip transition line is located on the quartz substrate. One end of the microstrip transition line is connected to an output microstrip transition line via, sequentially, a first microstrip transmission line, a low-pass filter, a radio frequency matching microstrip line, and a second microstrip transmission line. Anodes of four multi-junction THz-scale GaAs frequency doubling diodes are connected to the radio frequency matching microstrip line, and the outermost anode of each of the multi-junction THz-scale GaAs frequency doubling diodes is connected to a grounding quartz strip line. The circuit has a simple structure and can handle greater input power because of an increased number of Schottky diodes.