首页> 外国专利> OPTOELECTRONIC SEMICONDUCTOR CHIP, METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND HEADLIGHT COMPRISING AN OPTOELECTRONIC SEMICONDUCTOR CHIP

OPTOELECTRONIC SEMICONDUCTOR CHIP, METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND HEADLIGHT COMPRISING AN OPTOELECTRONIC SEMICONDUCTOR CHIP

机译:光电半导体芯片,制造光电半导体芯片的方法以及包括光电半导体芯片的前灯

摘要

An optoelectronic semiconductor chip having the following features is specified: – a semiconductor layer sequence (1) having a multiplicity of pixels (3), which comprises an active layer (2) suitable for generating electromagnetic radiation in a first wavelength range, and – a multiplicity of conversion elements (6), wherein – each conversion element (6) is suitable for converting radiation in the first wavelength range into radiation in a second wavelength range, – each pixel (3) comprises a radiation exit surface (5) and a conversion element (6) is arranged on each radiation exit surface (5), and – each conversion element (6) has a greater thickness in a central region than in an edge region. Furthermore, a method for producing an optoelectronic semiconductor chip and a headlight comprising an optoelectronic semiconductor chip are specified.
机译:规定了具有以下特征的光电子半导体芯片:–具有多个像素(3)的半导体层序列(1),其包括适合于产生第一波长范围内电磁辐射的有源层(2),以及–多个转换元件(6),其中–每个转换元件(6)适用于将第一波长范围内的辐射转换为第二波长范围内的辐射,–每个像素(3)包括一个辐射出射面(5)和一个转换元件(6)布置在每个辐射出射面(5)上,并且–每个转换元件(6)在中心区域的厚度大于在边缘区域的厚度。此外,提出了一种用于制造光电子半导体芯片的方法和一种包括光电子半导体芯片的前灯。

著录项

  • 公开/公告号WO2018036769A1

    专利类型

  • 公开/公告日2018-03-01

    原文格式PDF

  • 申请/专利权人 OSRAM OPTO SEMICONDUCTORS GMBH;

    申请/专利号WO2017EP69534

  • 发明设计人 GÖÖTZ BRITTA;LINKOV ALEXANDER;

    申请日2017-08-02

  • 分类号H01L33/50;H01L27/15;H01L33/58;H01L33/08;

  • 国家 WO

  • 入库时间 2022-08-21 12:45:34

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