ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN-FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICES, COMPOUND, AND RESIN

摘要

Provided is an active light-sensitive or radiation-sensitive resin composition, etc. that, even when the exposure scan rate is ultra high, has a high follow-up performance of the immersion liquid and can reduce scum and development defects. The active light-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeat unit represented by general formula (1). The pattern-forming method includes a step for forming a film using the active light-sensitive or radiation-sensitive resin composition, and the method for producing electronic devices includes the pattern-forming method. In general formula (1), Z represents a halogen atom, a group represented by R₁₁OCH₂-, or a group represented by R₁₂OC(=O)CH₂-. R₁₁ and R₁₂ represent monovalent substituents. X represents an oxygen atom or sulfur atom. L represents an (n + 1)-valent linking group. R represents a group that is decomposed by the action of an alkali developer, thereby increasing the solubility thereof in the alkali developer. n represents a positive integer.