GENERATION DEVICE, GENERATION METHOD AND APPLICATION FOR 2.9-MICRON WAVE BAND PULSE LASER

摘要

Provided is a generation device (100) for a 2.9-micron wave band pulse laser, comprising: a semiconductor pump laser, a pump light focusing and coupling system (2) and a resonant cavity (7), wherein the resonant cavity (7) comprises an end-face pump laser medium (4), and the end-face pump laser medium (4) is a thulium ion-doped vanadate crystal. Pump light generated by the semiconductor pump laser is coupled by the pump light focusing and coupling system (2) and enters the thulium ion-doped vanadate crystal. The thulium ion generates a 1.9-micron wave band pulse laser through stimulated radiation. The 1.9-micron wave band pulse laser oscillates in the resonant cavity (7). A Raman frequency conversion effect and a mode locking effect are carried out on the 1.9-micron wave band pulse laser by the vanadate crystal, so that the 2.3-micron wave band pulse laser is output, the 2.3-micron wave band pulse laser oscillating in the resonant cavity (7). A Raman frequency conversion effect and a mode locking effect are carried out on the 2.3-micron wave band pulse laser by the vanadate crystal, so that the 2.9-micron wave band pulse laser is output. By the generation device for the 2.9-micron wave band pulse laser, the 2.9-micron wave band ultrashort pulse laser with a high power and high energy is obtained.