METHOD OF REPAIRING DAMAGE OF GATE INSULATOR FILM OF FIELD EFFECT TRANSISTOR, USING FORWARD BIAS CURRENT

摘要

The present invention provides a method of repairing a damage of a gate insulator film of a field effect transistor, using a forward bias current. In the method of repairing damage of a gate insulator film, a first joule heat generated by a first forward bias current having occurred by applying a first forward bias voltage between a source area and a body of a substrate may be used, or a second joule heat generated by a second forward bias current having occurred by applying a second forward bias voltage between a drain area and the body of the substrate may be used, so as to repair the damage having occurred in the gate insulator film in the field effect transistor which comprises the substrate, the source area and the drain area formed on the substrate, a channel area formed on the substrate to connect the source area and the drain area, the gate insulator film formed on the channel area, and a gate structure formed on the gate insulator film.