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Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

机译：用溶液加工ZrO2电介质偏置薄膜晶体管的稳定性增强作为栅极绝缘体

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Shangxiong Zhou; Zhiqiang Fang; Honglong Ning; Wei Cai; Zhennan Zhu; Jinglin Wei; Xubing Lu; Weijian Yuan; Rihui Yao; Junbiao Peng;
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1. Dependence of Bias Stress on Hydrophobicity of Gate Insulator in Solution-Processed Organic Thin-Film Transistors [J] . Noh Wan-Woo, Lee Sin-Hyung, Lee Gyujeong, Journal of nanoscience and nanotechnology . 2016,第8期

机译：偏置应力对溶液处理有机薄膜晶体管中栅极绝缘子疏水性的依赖性
2. Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N_2O Plasma Treated MgO Gate Dielectrics [J] . Wei-Yu Chen, Jen-Sue Chen, Jiann-SMng Jeng ECS Journal of Solid State Science and Technology . 2013,第6期

机译：N_2O等离子体处理的MgO栅极电介质抑制氧空位并提高高迁移率ZnO薄膜晶体管的偏压应力稳定性
3. Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiO_x/SiN_x-Stacked Gate Insulator [J] . Mamoru Furuta, Yudai Kamada, Takahiro Hiramatsu, Applied physics express . 2011,第3ISSUE2期

机译：具有SiO_x / SiN_x堆叠栅极绝缘子的底栅氧化锌薄膜晶体管的正偏置不稳定性
4. Charge Transport in Solution-Processed Top-Gate Organic Thin-Film Transistors with Different Gate Insulators [C] . Kenichiro Takagi, Takashi Nagase, Takashi Kobayashi, International display workshops . 2012

机译：具有不同栅极绝缘体的溶液处理顶栅有机薄膜晶体管中的电荷传输
5. Understanding the Enhanced Mobility of Solution-Processed Metal-Oxide Thin-Film Transistors Having High-k Gate Dielectrics. [D] . Zeumault, Andre. 2017

机译：了解具有高k栅极介电常数的固溶处理金属氧化物薄膜晶体管的迁移率。
6. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric [O] . Seungbeom Choi, Seungho Song, Taegyu Kim, 2020

机译：使用溶液加工的聚合物栅极电介质自对准顶栅金属氧化物薄膜晶体管
7. The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric [O] . D. C. Hsu 2012

机译：具有ZrO2栅极电介质的n沟道金属氧化物半导体场效应晶体管的正偏置温度不稳定性

Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

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