首页> 外国专利> GRATING LAYER WITH VARIABLE PITCH FORMED USING DIRECTED SELF-ASSEMBLY OF MULTIBLOCK COPOLYMERS

GRATING LAYER WITH VARIABLE PITCH FORMED USING DIRECTED SELF-ASSEMBLY OF MULTIBLOCK COPOLYMERS

机译:使用多嵌段共聚物的直接自组装形成可变节距的层

摘要

Disclosed herein are integrated circuits incorporating grating layers with variable pitch, and methods of producing the same. In one implementation, an integrated circuit comprises a substrate and a grating layer formed above the substrate. The grating layer comprising metal regions separated from each other by dielectric spacers, having variable metal-to-metal pitch throughout the grating layer. The integrated circuit further comprises a hard mask layer formed above the grating layer, and a via formed through the hard mask layer to electrically couple a first metal region of the grating layer to an upper interconnect structure.
机译:本文公开了结合了具有可变间距的光栅层的集成电路及其制造方法。在一个实施方式中,集成电路包括衬底和形成在衬底上方的光栅层。所述光栅层包括通过介电间隔物彼此分开的金属区域,所述金属区域在整个光栅层中具有可变的金属到金属间距。该集成电路还包括:形成在光栅层上方的硬掩模层;以及穿过硬掩模层形成的通孔,以将光栅层的第一金属区域电耦合到上部互连结构。

著录项

  • 公开/公告号WO2018125089A1

    专利类型

  • 公开/公告日2018-07-05

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号WO2016US68931

  • 申请日2016-12-28

  • 分类号H01L21/768;

  • 国家 WO

  • 入库时间 2022-08-21 12:43:26

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