Multi-layered resistive type multi-point temperature measuring wafer sensor and method for fabricating the same

摘要

According to the present invention, a multi-layered resistive multi-point temperature measuring wafer sensor (1) comprises: an electrode portion (20) formed with a plurality of electrode wirings (21) on a wafer (10); a resistive portion (30) installed to be located on a layer different from the electrode portion (20) on the wafer (10), and formed by serially connecting a plurality of unit resistors (31) by a connecting wiring (32); an interlayer insulation layer (50) installed between the electrode portion (20) and the resistive portion (30); and a conductive plug (55) installed on a via hole of the interlayer insulation layer (50) so that one end of each of the electrode wirings (21) is electrically connected to both ends of the unit resistors (31). Accordingly, potential difference of the resistive portion (30) is measured through the electrode portion (20) so that temperature uniformity of the wafer (10) is detected. According to the present invention, the electrode portion (20) and the resistive portion (30) are formed on different layers, and thus the unit resistors (31) of the resistive portion (30) and the connecting wire (32) can be installed on the whole surface of the wafer (10) without interruption of the electrode portion (20). Therefore, the temperature uniformity can be precisely grasped with respect to the whole surface of the wafer (10).