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Multi-layered resistive type multi-point temperature measuring wafer sensor and method for fabricating the same
Multi-layered resistive type multi-point temperature measuring wafer sensor and method for fabricating the same
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机译:多层电阻式多点测温晶片传感器及其制造方法
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摘要
The multi-layered resistive multi-point temperature measuring wafer sensor 1 according to the present invention comprises: an electrode portion 20 having a plurality of electrode wirings 21 formed on a wafer 10; A resistance portion 30 provided on the wafer 10 so as to be positioned on a layer different from the electrode portion 20 and having a plurality of unit resistors 31 connected in series by a connection wiring 32; An interlayer insulating layer 50 provided between the electrode portion 20 and the resistance portion 30; A conductive plug 55 provided on a via hole of the interlayer insulating layer 50 such that one end of each of the electrode wirings 21 and 21 is electrically connected to both ends of the unit resistors 31; So that the temperature uniformity of the wafer 10 can be detected by measuring the potential difference in the resistance portion 30 through the electrode portion 20. The electrode unit 20 and the resistance unit 30 are formed on different layers so that the unit resistance 31 of the resistance unit 30 and the connection wiring 32 are prevented from interfering with the electrode unit 20 It can be installed on the entire surface of the wafer 10 without receiving it. Therefore, temperature uniformity can be grasped with respect to the entire surface of the wafer 10. [
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