Method of manufacturing multi-gate single-electron device system operating in room-temperature

摘要

A method of fabricating a multi-gate single electron device system operating at room temperature is disclosed. (A) forming a top silicon layer structure on a silicon-on-insulator (SOI) wafer using lithography and etching, the top silicon layer structure comprising a source, a channel, a drain and one or more side gates; (b) forming an ion implantation mask over the channel and implanting Group III or V fluoride; (c) forming an etch mask on the surface of the wafer except for the channel top, channel top and side gate portions using lithography, and etching the top silicon layer of the portion where the etch mask is not formed to a predetermined thickness; (d) etching so that the upper silicon layer of a predetermined thickness remains, and then removing the etching mask; (e) growing a silicon oxide film through a thermal oxidation process; (f) forming a polysilicon layer or a metal thin film on the surface of the wafer, forming a mask so as to cover an upper portion of the channel and a part of the source or drain using lithography, and etching the upper layer gate .